Journals Information
Universal Journal of Materials Science Vol. 2(1), pp. 1 - 4
DOI: 10.13189/ujms.2014.020101
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Reversible Capacitance Change of Nematic Liquid Crystal Cell Doped with Semiconductor CdSe/ZnS Quantum Dots
E.A. Konshina , I.F. Galin *, E.O. Gavrish
National Research University of Information Technologies, Mechanics and Optics
ABSTRACT
Electrical characteristics of the nematic LC cells with 3.5 nm semiconductor CdSe/ZnS quantum dots (QDs) were investigated. We observed variation of the LC cell capacitance with QDs concentration about 0.18 wt. %. The capacitance grown to three orders of magnitude at primary measuring under voltages below the Fredericks threshold and then it dropped. Repeated tests shown that the capacitance maximum of dependence decreased and disappeared after repeated measurements of the LC cell. The maximum arose again after applying to the LC cell of the alternating-current electric field with voltage of 30 V at a frequency of 1 kHz for 10 minutes. Changing of the capacitance was observed in the result of mobile ions interactions of liquid crystal with QDs in the electric field. That contributed to an aggregation and moving charged nanoparticles in the direction of substrates of LC cell as well as their reverse motion to a centre under action of applied voltage onto the LC cell.
KEYWORDS
Nematic Liquid Crystal, CdSe/ZnS Quantum Dots, Capacitance
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.A. Konshina , I.F. Galin , E.O. Gavrish , "Reversible Capacitance Change of Nematic Liquid Crystal Cell Doped with Semiconductor CdSe/ZnS Quantum Dots," Universal Journal of Materials Science, Vol. 2, No. 1, pp. 1 - 4, 2014. DOI: 10.13189/ujms.2014.020101.
(b). APA Format:
E.A. Konshina , I.F. Galin , E.O. Gavrish (2014). Reversible Capacitance Change of Nematic Liquid Crystal Cell Doped with Semiconductor CdSe/ZnS Quantum Dots. Universal Journal of Materials Science, 2(1), 1 - 4. DOI: 10.13189/ujms.2014.020101.