Journals Information
Nanoscience and Nanoengineering(CEASE PUBLICATION) Vol. 1(1), pp. 7 - 14
DOI: 10.13189/nn.2013.010102
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Optimization of Doping of Heterostructure during Manufacturing of P-I-N-Diodes
E.L. Pankratov1,*, E.A. Bulaeva2
1 Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky Street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduce an approach to manufacture p-i-n-diodes with higher compactness. The introduced approach based on implantation of ions of dopants in a semiconductor heterostructure and optimization of annealing.
KEYWORDS
P-I-N-Diodes, Optimization of Manufacturing, Analytical Approach for Modeling
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.L. Pankratov , E.A. Bulaeva , "Optimization of Doping of Heterostructure during Manufacturing of P-I-N-Diodes," Nanoscience and Nanoengineering(CEASE PUBLICATION), Vol. 1, No. 1, pp. 7 - 14, 2013. DOI: 10.13189/nn.2013.010102.
(b). APA Format:
E.L. Pankratov , E.A. Bulaeva (2013). Optimization of Doping of Heterostructure during Manufacturing of P-I-N-Diodes. Nanoscience and Nanoengineering(CEASE PUBLICATION), 1(1), 7 - 14. DOI: 10.13189/nn.2013.010102.