Journals Information
Universal Journal of Applied Science(CEASE PUBLICATION) Vol. 1(1), pp. 18 - 26
DOI: 10.13189/ujas.2013.010104
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Influence of Adsorption of Dopant on Distribution of the Dopant in A P-N-Junction
E.L. Pankratov1,*, E.A. Bulaeva2
1 Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky Street, Nizhny Novgorod, 603950, Russia
ABSTRACT
It has been shown, that manufacturing diffusive- and implanted-junction rectifiers in a semiconductor hete-rostructure and optimization of annealing give us possibility to increase sharpness of p-n-junction and homogeneity of dopant distribution in doped area. In this paper we consider influence of adsorption of dopant in the heterostructure on distribution of dopant concentration in the p-n-junction. Based on results of modeling we show, that adsorption of dopant gives us possibility to decrease both sharpness of the p-n-junction and homogeneity of dopant distribution in enriched by the dopant area.
KEYWORDS
Diffusive- and Implanted-Junction Hetero-rectifiers, Influence of Adsorption of Dopant, Optimization of Manufacturing
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.L. Pankratov , E.A. Bulaeva , "Influence of Adsorption of Dopant on Distribution of the Dopant in A P-N-Junction," Universal Journal of Applied Science(CEASE PUBLICATION), Vol. 1, No. 1, pp. 18 - 26, 2013. DOI: 10.13189/ujas.2013.010104.
(b). APA Format:
E.L. Pankratov , E.A. Bulaeva (2013). Influence of Adsorption of Dopant on Distribution of the Dopant in A P-N-Junction. Universal Journal of Applied Science(CEASE PUBLICATION), 1(1), 18 - 26. DOI: 10.13189/ujas.2013.010104.