Journals Information
Manufacturing Science and Technology(CEASE PUBLICATION) Vol. 3(5), pp. 249 - 252
DOI: 10.13189/mst.2015.030509
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Different Gate Insulators for Organic Field Effect Transistors
O. Boughias 1,2,*, M.S. Belkaid 1, T. Trigaud 2, R.Zirmi 1
1 Laboratory of Advanced Technology, Department of Electrical Engineering, Electronics, University of Mouloud Mammeri, Algeria
2 X-LIM UMR 7252 laboratory, University of Limoges/CNR, France
ABSTRACT
The aim of this paper is to study the electrical properties of field effect transistors structures with two different insulators polymers, i.e, poly4, vinylphenol (PVP) and silicon oxide (SiO2). In these studies, the organic active layer is always the same it is constituted of pentacene. PVP is an organic material with low k deposited by spin coating. Significant differences in terms of mobility and leakage current are observed with the two dielectrics. Mobility is almost 10 times higher with SiO2 than with PVP. It is the same with the current leakage that are 1000 times smaller with SiO2.
KEYWORDS
Organic Field Effect Transistor, Pentacene, Silicon Oxide, Poly (4, Vinylphenol)
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] O. Boughias , M.S. Belkaid , T. Trigaud , R.Zirmi , "Different Gate Insulators for Organic Field Effect Transistors," Manufacturing Science and Technology(CEASE PUBLICATION), Vol. 3, No. 5, pp. 249 - 252, 2015. DOI: 10.13189/mst.2015.030509.
(b). APA Format:
O. Boughias , M.S. Belkaid , T. Trigaud , R.Zirmi (2015). Different Gate Insulators for Organic Field Effect Transistors. Manufacturing Science and Technology(CEASE PUBLICATION), 3(5), 249 - 252. DOI: 10.13189/mst.2015.030509.