51视频

Manufacturing Science and Technology(CEASE PUBLICATION) Vol. 3(5), pp. 274 - 277
DOI: 10.13189/mst.2015.030513
Reprint (PDF) (205Kb)

Deep Levels in InGaN/GaN-LEDs

Nazir A. Naz ^1,*, M. Imran ², Nabeela Akbar ³, Akbar Ali ^1,2
1 Department of Applied Physics, Federal Urdu University of Arts, Science and Technology, Pakistan
² Department of Basic Sciences, Riphah International University, Pakistan
³ Department of Physics, COMSATS Institute of Information Technology, Pakistan

ABSTRACT

Study of defects in a semiconducting material can help in improving the electrical and optical properties of a device based on such material. There is a general paucity of knowledge about the nature and origin of deep level defects in ternary and quaternary semiconductors in literature. It is, therefore, of interest to study defects in ternary semiconductor, InGaN-based, LEDs. By employing deep level transient spectroscopy (DLTS), at least nine defects, labeled, E1-E9 have been observed in InGaN-LEDs. Of these, seven defects E2-E8 have been characterized. Respective energy states induced by the defects within the band gap are found to be 0.61, 1.00, 1.24, 1.37, 1.46, 1.68, 2.25 eV and capture cross-sections, at infinite temperature, are 2.27脳10^-17, 4.39脳10^-29, 1.37脳10^-20, 9.58脳10^-22, 4.61脳10^-28, 2.19脳10^-24 and 8.23脳10^-22 cm². Concentrations of the defects were estimated to be 4.6脳10⁴, 2.7脳10⁴, 19.2脳10⁴, 6.9脳10⁴, 6.9脳10⁴, 5.9脳10⁴ and 6.3脳10⁴ (cm³), respectively.

KEYWORDS
InGaN, LEDs, MOCVD, Defects, DLTS

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Nazir A. Naz , M. Imran , Nabeela Akbar , Akbar Ali , "Deep Levels in InGaN/GaN-LEDs," Manufacturing Science and Technology(CEASE PUBLICATION), Vol. 3, No. 5, pp. 274 - 277, 2015. DOI: 10.13189/mst.2015.030513.

(b). APA Format:
Nazir A. Naz , M. Imran , Nabeela Akbar , Akbar Ali (2015). Deep Levels in InGaN/GaN-LEDs. Manufacturing Science and Technology(CEASE PUBLICATION), 3(5), 274 - 277. DOI: 10.13189/mst.2015.030513.