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Nanoscience and Nanoengineering(CEASE PUBLICATION) Vol. 4(2), pp. 40 - 45
DOI: 10.13189/nn.2016.040202
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Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon鈥揝ilicon Structures

I. B. Olenych ^*
Department of Electronics, Ivan Franko Lviv National University, Ukraine

ABSTRACT

Zinc oxide nanostructures have been grown by electrochemical deposition on porous silicon-silicon substrate. The effect of electrolyte temperature on the morphology of grown ZnO arrays was observed. Temperature dependencies of the electrical conductivity for the structures based on porous silicon were investigated in 80-325 K range. The results are analyzed within the model of disordered semiconductors and the activation energy of charge transport is determined. It is shown that ZnO layers cause the decrease of the electrical conductivity activation energy in 140-250 袣 temperature range. Electric conductivity was also shown to be dependent on the morphology of ZnO arrays. Based on the spectra of thermally stimulated depolarization current, the localized electron states in the experimental samples are found. The trap levels are distributed quasi-continuously on the activation energy and exist in the ranges of 0.2-0.3, 0.4-0.45, 0.5-0.55 and 0.6-0.65 eV. ZnO nanocrystals grown on porous silicon substrates modify density of states in different energy ranges.

KEYWORDS
Porous Silicon, Zinc Oxide, Conductivity, Activation Energy, Thermally Stimulated Depolarization

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] I. B. Olenych , "Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon鈥揝ilicon Structures," Nanoscience and Nanoengineering(CEASE PUBLICATION), Vol. 4, No. 2, pp. 40 - 45, 2016. DOI: 10.13189/nn.2016.040202.

(b). APA Format:
I. B. Olenych (2016). Effect of ZnO Layers on Transport and Relaxation of Charge in Porous Silicon鈥揝ilicon Structures. Nanoscience and Nanoengineering(CEASE PUBLICATION), 4(2), 40 - 45. DOI: 10.13189/nn.2016.040202.