Journals Information
Universal Journal of Materials Science Vol. 1(2), pp. 46 - 51
DOI: 10.13189/ujms.2013.010206
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An Approach to Decrease Dimentions and to Simplify Construction of Planar Field-effect Heterotransistors
E.L. Pankratov1, E.A. Bulaeva2,*
1 Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduce an approach to decrease dimensions of planar field-effect heterotransistors by using dopant diffusion in a semiconductor heterostructure and optimization of annealing time. Some conditions to maximal increasing of the effect have been formulated. We also introduce an approach to decrease price of manufacturing of considered transistors due to simplification of their construction.
KEYWORDS
Field-Effect Heterotransistor, Decreasing Dimensions of Transistor, Analytical Approach to Model Technological Process, Optimization of Technological Process
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.L. Pankratov , E.A. Bulaeva , "An Approach to Decrease Dimentions and to Simplify Construction of Planar Field-effect Heterotransistors," Universal Journal of Materials Science, Vol. 1, No. 2, pp. 46 - 51, 2013. DOI: 10.13189/ujms.2013.010206.
(b). APA Format:
E.L. Pankratov , E.A. Bulaeva (2013). An Approach to Decrease Dimentions and to Simplify Construction of Planar Field-effect Heterotransistors. Universal Journal of Materials Science, 1(2), 46 - 51. DOI: 10.13189/ujms.2013.010206.