51视频

Universal Journal of Chemistry(CEASE PUBLICATION) Vol. 4(2), pp. 74 - 77
DOI: 10.13189/ujc.2016.040205
Reprint (PDF) (1152Kb)

Semiconductor Thin Films of In₂S₃ for Solar Cells

Tulenin S.S. ^1,*, Tretyakov A.V. ¹, Shaidarov L.V. ¹, Maskaeva L.N. ¹, Maraeva E.V. ², Markov V.F. ^1
1 Department of Physical and Colloidal Chemistry Ural Federal University, Russia
² Saint Petersburg Electrotechnical University "LETI", Russia

ABSTRACT

In₂S₃ thin films were grown by means chemical bath deposition from acid solution. Calculation of ionic equilibrium with using of thermodynamic constants for systems defines boundary conditions of formation In₂S₃. Films were characterized by means of XRD, SEM, EDX and XPS methods. According to X-ray analysis In₂S₃ thin films has a cubic structure. XPS method was shown that the surface of In₂S₃ thin film includes oxygen and carbon contained impurities. SEM confirmed nanosized nature of thin films. Optical band gap of indium(III) sulfide equal to 2.3 eV.

KEYWORDS
Boundary Conditions of Deposition, Chemical Bath Deposition, Indium(III) Sulfide, XRD, XPS

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Tulenin S.S. , Tretyakov A.V. , Shaidarov L.V. , Maskaeva L.N. , Maraeva E.V. , Markov V.F. , "Semiconductor Thin Films of In₂S₃ for Solar Cells," Universal Journal of Chemistry(CEASE PUBLICATION), Vol. 4, No. 2, pp. 74 - 77, 2016. DOI: 10.13189/ujc.2016.040205.

(b). APA Format:
Tulenin S.S. , Tretyakov A.V. , Shaidarov L.V. , Maskaeva L.N. , Maraeva E.V. , Markov V.F. (2016). Semiconductor Thin Films of In₂S₃ for Solar Cells. Universal Journal of Chemistry(CEASE PUBLICATION), 4(2), 74 - 77. DOI: 10.13189/ujc.2016.040205.