Journals Information
Manufacturing Science and Technology(CEASE PUBLICATION) Vol. 6(1), pp. 1 - 22
DOI: 10.13189/mst.2019.060101
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On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit
E. L. Pankratov 1,2,*
1 Nizhny Novgorod State University, Russia
2 Nizhny Novgorod State Technical University, Russia
ABSTRACT
In this paper we introduce an approach to increase integration rate of elements of an integrator operational amplifier. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
KEYWORDS
Integrator Operational Amplifier, Increasing Integration Rate of Field-effect Heterotransistors, Optimization of Manufacturing
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E. L. Pankratov , "On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit," Manufacturing Science and Technology(CEASE PUBLICATION), Vol. 6, No. 1, pp. 1 - 22, 2019. DOI: 10.13189/mst.2019.060101.
(b). APA Format:
E. L. Pankratov (2019). On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit. Manufacturing Science and Technology(CEASE PUBLICATION), 6(1), 1 - 22. DOI: 10.13189/mst.2019.060101.