Journals Information
Universal Journal of Materials Science Vol. 7(2), pp. 14 - 24
DOI: 10.13189/ujms.2019.070202
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Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field-effect Heterotransistor to Decrease Their Dimensions
E. L. Pankratov 1,2,*
1 Nizhny Novgorod State University, Russia
2 Nizhny Novgorod State Technical University, Russia
ABSTRACT
In this paper we introduce an approach to decrease dimensions of operational amplifier based on field-effect heterotransistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostruc-ture by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
KEYWORDS
Operational Amplifier, Increasing Integration Rate of Field-effect Heterotransistors, Optimization of Manufacturing
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E. L. Pankratov , "Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field-effect Heterotransistor to Decrease Their Dimensions," Universal Journal of Materials Science, Vol. 7, No. 2, pp. 14 - 24, 2019. DOI: 10.13189/ujms.2019.070202.
(b). APA Format:
E. L. Pankratov (2019). Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field-effect Heterotransistor to Decrease Their Dimensions. Universal Journal of Materials Science, 7(2), 14 - 24. DOI: 10.13189/ujms.2019.070202.