Journals Information
Universal Journal of Materials Science Vol. 1(3), pp. 159 - 169
DOI: 10.13189/ujms.2013.010302
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Influence of Overlayer and Optimization of Annealing Time on Distribution of Dopant in an Implanted-Heterojunction Rectifier
E.L. Pankratov 1,*, E.A. Bulaeva 2
1 Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky Street, Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we analyzed redistribution of a dopant, which implanted in a heterostructure, during annealing of radiation defects. The annealing has been done after overgrowth of the damaged during implantation area. The analysis has been verified recently obtained effects of increasing of sharpness of implanted-junction rectifier and homogeneity of distribution of dopant in enriched by the dopant area. At the same time using of overlayer gives us possibility to additionally increase homogeneity of dopant distribution.
KEYWORDS
Implanted-Heterojunction Rectifiers, Optimization Of Annealing Of Radiation Defects and Dopant, Influence Of Presents Of Overlayer On Distribution Of Dopant
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.L. Pankratov , E.A. Bulaeva , "Influence of Overlayer and Optimization of Annealing Time on Distribution of Dopant in an Implanted-Heterojunction Rectifier," Universal Journal of Materials Science, Vol. 1, No. 3, pp. 159 - 169, 2013. DOI: 10.13189/ujms.2013.010302.
(b). APA Format:
E.L. Pankratov , E.A. Bulaeva (2013). Influence of Overlayer and Optimization of Annealing Time on Distribution of Dopant in an Implanted-Heterojunction Rectifier. Universal Journal of Materials Science, 1(3), 159 - 169. DOI: 10.13189/ujms.2013.010302.