Journals Information
Universal Journal of Electrical and Electronic Engineering Vol. 6(5B), pp. 90 - 95
DOI: 10.13189/ujeee.2019.061612
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Band Anti-Crossing Modelling on Tailored Ga1-xInxN yAs1-y Band Gap Energy Based Nitrogen Fraction
Muhammad Izzuddin Abd Samad 1,2, Khairul Anuar Mohamad 1,2,*, Mohammad Syahmi Nordin 3, Nafarizal Nayan 1,2, Afishah Alias 2,4, Marinah Othman 5, Adrian Boland-Thoms 3, Anthony John Vickers 3
1 Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Malaysia
2 Microelectronics and Nanotechnology 鈥� Shamsuddin Research Centre, Universiti Tun Hussein Onn Malaysia, Malaysia
3 School of Computer Science and Electronic Engineering, University of Essex, United Kingdom
4 Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Malaysia
5 Faculty of Engineering and Built Environment, Universiti Sains Islam Malaysia, Malaysia
ABSTRACT
This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (
) parameters. The first two methods used Vegard鈥檚 law and Varshni鈥檚 equation to estimate by considering Ga1-xInxAs as ternary alloy based on temperature dependence, with values of bowing parameter of 0.475 and 0.477, respectively. The third method used excitonic band gap theory for Ga1-xInxAs alloy temperature dependence by considering Passler fitting (
) and average phonon temperature (
). Results depict that optimum nitrogen fraction was in the range of 0.012 to 0.018% to achieve the device response at 1.3 渭m wavelength, with an energy band gap in range of 0.955 卤 0.005 eV. Future work shows a potential study on influence of indium fractions in tailored energy band gap of Ga1-xInxN yAs1-y alloy and compressive strain of material.
KEYWORDS
Band Anti-Crossing, Dilute Nitride, Gallium Arsenide, Ga1-xInxN yAs1-y Alloy, Band Gap, 1.3 渭m Wavelength
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Muhammad Izzuddin Abd Samad , Khairul Anuar Mohamad , Mohammad Syahmi Nordin , Nafarizal Nayan , Afishah Alias , Marinah Othman , Adrian Boland-Thoms , Anthony John Vickers , "Band Anti-Crossing Modelling on Tailored Ga1-xInxN yAs1-y Band Gap Energy Based Nitrogen Fraction," Universal Journal of Electrical and Electronic Engineering, Vol. 6, No. 5B, pp. 90 - 95, 2019. DOI: 10.13189/ujeee.2019.061612.
(b). APA Format:
Muhammad Izzuddin Abd Samad , Khairul Anuar Mohamad , Mohammad Syahmi Nordin , Nafarizal Nayan , Afishah Alias , Marinah Othman , Adrian Boland-Thoms , Anthony John Vickers (2019). Band Anti-Crossing Modelling on Tailored Ga1-xInxN yAs1-y Band Gap Energy Based Nitrogen Fraction. Universal Journal of Electrical and Electronic Engineering, 6(5B), 90 - 95. DOI: 10.13189/ujeee.2019.061612.