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Journals Information

Nanoscience and Nanoengineering(CEASE PUBLICATION) Vol. 1(3), pp. 134 - 138
DOI: 10.13189/nn.2013.010302
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Fabrication of Nanoporous Silicon By Ag+-Ion Implantation


Andrey L. Stepanov 1,2,*, Alexander A. Trifonov 2, Yury N. Osin 2, Valery F. Valeev 1, Vladimir I. Nuzhdin 1
1 Kazan Physical-Technical Institute, Russian Academy of Sciences, Kazan, 420029, Russian Federation
2 Kazan Federal University, Kazan, 420008, Russian Federation

ABSTRACT

A new nanotechnology approach to create a nanoporous silicon layers by low-energy high-dose metal-ion implantation is demonstrated. Ag-ion implantation into monocrystalline silicone substrate at energy 30 keV with doses from 7.5脳1016 to 1.5脳1017 ion/cm2 was carried out. Surface nanoporous structures were studied by scanning electron microscope imaging and energy-dispersive X-ray analysis. For the first time it is shown that nanoporous silicon were formed by Ag-ion implantation. The average sizes of porous holes and thickness of walls between porous are about 110-130 and 30-60 nm, respectively. The formation of silver nanoparticles with average size of 5-10 nm inside porous silicon structures was detected. Thus, ion implantation is suggested to be used for a fabrication of naoporous layer structure, which could be easily combined with the silicon matrix for various applications.

KEYWORDS
Nanoporous Silicon, Silver Nanoparticles, Ion Implantation

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Andrey L. Stepanov , Alexander A. Trifonov , Yury N. Osin , Valery F. Valeev , Vladimir I. Nuzhdin , "Fabrication of Nanoporous Silicon By Ag+-Ion Implantation," Nanoscience and Nanoengineering(CEASE PUBLICATION), Vol. 1, No. 3, pp. 134 - 138, 2013. DOI: 10.13189/nn.2013.010302.

(b). APA Format:
Andrey L. Stepanov , Alexander A. Trifonov , Yury N. Osin , Valery F. Valeev , Vladimir I. Nuzhdin (2013). Fabrication of Nanoporous Silicon By Ag+-Ion Implantation. Nanoscience and Nanoengineering(CEASE PUBLICATION), 1(3), 134 - 138. DOI: 10.13189/nn.2013.010302.