Journals Information
Universal Journal of Materials Science Vol. 8(1), pp. 11 - 16
DOI: 10.13189/ujms.2020.080102
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Effects of Temperature on the Free Carrier Traps of Shockley Read Hall Recombination Mechanisms for Gallium Sul铿乨e (GaS) Semiconductor
G. E. Gebramichael *
Department of Physics, CNCS, Wolkite University, P.O.Box 07, Wolkite, Ethiopia
ABSTRACT
In this paper, we have studied the effects of temperature on the free carrier trap of Gallium Sul铿乨e (GaS) in Shockley read hall recombination mechanism. We have seen dependencies on the energy level in the trap of electrons and holes in their respective bands and classify these energy levels into 铿乿e regions based on the interactions of the localized states with the conduction or valence bands in the high-temperature region. Gallium sul铿乨e compound semiconductor has material impurities that introduce some intermediate energy levels in the forbidden gap. These levels act as recombination centers (or traps, from which the process is otherwise depicted as trap assisted recombination) and an intermediate step is introduced in the recombination process. Another is described as a hole that ascends to the intermediate level (equivalently described as a hole capture of the trap), recombining with an electron. It has also investigated that, at high temperatures, it shows only the electron trap for a wider range of localized trap energies and it shows a small region of localized trap energies for low temperatures. It also shows similar variations for trap density. Additionally, we also analyse the effects of injection levels on traps of free carriers. The variation of both excess carriers in the conduction and valence bands and excess electrons on trap level is the same with illumination at low injection level.
KEYWORDS
Shockley Read Hall, Gallium Sul铿乨e, Temperature, Carriers Trap, Injection Level
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] G. E. Gebramichael , "Effects of Temperature on the Free Carrier Traps of Shockley Read Hall Recombination Mechanisms for Gallium Sul铿乨e (GaS) Semiconductor," Universal Journal of Materials Science, Vol. 8, No. 1, pp. 11 - 16, 2020. DOI: 10.13189/ujms.2020.080102.
(b). APA Format:
G. E. Gebramichael (2020). Effects of Temperature on the Free Carrier Traps of Shockley Read Hall Recombination Mechanisms for Gallium Sul铿乨e (GaS) Semiconductor. Universal Journal of Materials Science, 8(1), 11 - 16. DOI: 10.13189/ujms.2020.080102.