Journals Information
Universal Journal of Applied Mathematics Vol. 1(1), pp. 17 - 31
DOI: 10.13189/ujam.2013.010104
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Diagnostics of Possibility to Increase Prediction of Dynamic of Charge Carriers in A P-N-Junction with Optimized Distributions of Dopants
E.L. Pankratov1,*, E.A. Bulaeva2
1 Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky street,Nizhny Novgorod, 603950, Russia
ABSTRACT
It has been recently shown, that manufacturing a diffusion-junction rectifier in a multilayer structure at optimal relation between annealing time, materials and thicknesses of layers of the structure gives us possibility to increase sharpness of p-n-junctions and to increase homogeneity of dopant distribution in enriched area. In this paper we estimate distributions of concentrations of charge carriers in the p-n-junction. At the same time we introduce an analytical approach to estimate the distributions. The approach gives us possibility to take into account spatiotemporal variations of properties of materials and several effects at one tine (diffusion of charge carriers et all), which recently have taken into account independently from each other.
KEYWORDS
Optimized Diffusion-Junction Rectifier, Dynamics of Charge Carriers; Analytical Approach of Modeling
Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] E.L. Pankratov , E.A. Bulaeva , "Diagnostics of Possibility to Increase Prediction of Dynamic of Charge Carriers in A P-N-Junction with Optimized Distributions of Dopants," Universal Journal of Applied Mathematics, Vol. 1, No. 1, pp. 17 - 31, 2013. DOI: 10.13189/ujam.2013.010104.
(b). APA Format:
E.L. Pankratov , E.A. Bulaeva (2013). Diagnostics of Possibility to Increase Prediction of Dynamic of Charge Carriers in A P-N-Junction with Optimized Distributions of Dopants. Universal Journal of Applied Mathematics, 1(1), 17 - 31. DOI: 10.13189/ujam.2013.010104.